PART |
Description |
Maker |
MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
GS82582T20 |
288Mb SigmaDDR-II TM Burst of 2 SRAM
|
GSI Technology
|
IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
K7J163682B K7J161882B |
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7J323682M K7J321882M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
IDTIDT71P79104167BQ IDTIDT71P79104167BQI IDTIDT71P |
18Mb Pipelined DDR⑩II SIO SRAM Burst of 2
|
Integrated Device Technology
|
CY7C1394JV18-300BZC CY7C1394JV18-300BZI CY7C1394JV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1522V18 CY7C1522V18-167BZC CY7C1522V18-167BZI |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1623KV18 CY7C1623KV18-333BZXC |
144-Mbit DDR-II SIO SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1423AV18-300BZI CY7C1423AV18-200BZI CY7C1429AV |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.5 ns, PBGA165 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|